Bonding characteristics of the √3°√3 Ag/Si interface identified by the energy dependence of the photoionization cross section

Author:

Yeh J.-J.,Bertness K. A.,Cao R.,Hwang J.,Lindau I.

Publisher

American Physical Society (APS)

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mapping of chemical bonding states of Ag/Si(111) with synchrotron radiation photo emission electron microscopy;Surface and Interface Analysis;2008-12

2. Optical evidence for interface electronic states at Ag/Si interfaces;Surface Science;1992-07

3. Low temperature studies of semiconductor surfaces;Progress in Surface Science;1991

4. Silicon chemisorption on silver(111) and (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-07

5. Early-stage formation of metal-semiconductor interfaces;Physical Review B;1988-05-15

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