Calculation of the hyperfine-interaction tensors of thePGaantisite in GaP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.14315/fulltext
Reference37 articles.
1. Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors
2. ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
3. The deep double donor PGain GaP
4. ODMR studies of antisite-related luminescence in GaP
5. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Relative concentration and structure of native defects in GaP;Physical Review B;2005-11-30
2. Electronic structure of theSbGaheteroantisite defect in GaAs:Sb;Physical Review B;1994-10-15
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