Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells-Reference-Cited by-同舟云学术

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Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells

Published:2007-08-06 Issue:8 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gärtner A.,Prechtel L.,Schuh D.,Holleitner A. W.,Kotthaus J. P.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.085304/fulltext

Reference29 articles.

1. Strain confinement and thermodynamics of free excitons in a direct-gap semiconductor

2. Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures

3. Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures

4. Magnetic trap for excitons

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