Reflectance difference spectroscopy of highly oriented (2×1) reconstructed Si(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.R6823/fulltext
Reference20 articles.
1. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors
2. Polarization dependence of optical transitions in GaP(1 1 0) and GaAs(1 1 0) surfaces studied with surface differential reflectivity
3. Reflectance difference forinsitucontrol of surface V/III ratio during epitaxial growth of GaAs
4. Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition
5. Surface-Induced Optical Anisotropies of Single-Domain(2×1)Reconstructed (001) Si and Ge Surfaces
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