Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells-Reference-Cited by-同舟云学术

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Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

Published:2006-03-30 Issue:12 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tchernycheva M.,Nevou L.,Doyennette L.,Julien F. H.,Warde E.,Guillot F.,Monroy E.,Bellet-Amalric E.,Remmele T.,Albrecht M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.125347/fulltext

Reference48 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Shortest wavelength semiconductor laser diode

3. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells

4. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

5. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells

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