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Optical spin injection inMoS2monolayers

Published:2016-03-24 Issue:11 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Arzate N.,Mendoza Bernardo S.,Vázquez-Nava R. A.,Ibarra-Borja Z.,Álvarez-Núñez M. I.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.115433/fulltext

Reference58 articles.

2. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Valley Susceptibility of an Interacting Two-Dimensional Electron System

5. Valley-dependent optoelectronics from inversion symmetry breaking

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1. Manipulating Photogalvanic Effects in Two-Dimensional Multiferroic Breathing Kagome Materials;The Journal of Physical Chemistry Letters;2024-08-19

2. Unidirectional valley-contrasting photocurrent in strained transition metal dichalcogenide monolayers;Physical Review B;2022-05-16

3. Colloquium : Physical properties of group-IV monochalcogenide monolayers;Reviews of Modern Physics;2021-03-10

4. Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films;Materials;2020-12-03

5. Molybdenum disulfide nanosheets embedded with nanodiamond particles: co-dispersion nanostructures as reinforcements for polymer scaffolds;Applied Materials Today;2019-12

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