Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K-Reference-Cited by-同舟云学术

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Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

Published:1997-03-01 Issue:10 Volume:55 Page:6196-6202
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Buschhorn G.,Diedrich E.,Kufner W.,Rzepka M.,Genz H.,Hoffmann-Stascheck P.,Richter A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.6196/fulltext

Reference21 articles.

1. Axial channeling radiation from MeV electrons

2. Channeling radiation beyond the continuum model: The phonon ‘‘Lamb shift’’ and higher-order corrections

3. Relativistic Hartree–Fock X-ray and electron scattering factors

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1. Joint Study of Temperature Dependences of Thermal Expansion and Heat Capacity of Solid Beryllium;High Temperature;2018-03

2. Energy spectra of Ar ions scattered on Al and Ge surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-07

3. Planar channeling radiation by relativistic electrons in different structures of silicon carbide;Journal of Physics: Conference Series;2012-05-03

4. Planar channeling radiation by 20-800 MeV electrons in a thin silicon carbide;The European Physical Journal Plus;2011-06

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