Photoluminescence study of silicon donors inn-type modulation-doped GaAs/AlAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.1942/fulltext
Reference16 articles.
1. Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells
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4. Raman scattering from electrons bound to shallow donors inGaAs−AlxGa1−xAsquantum-well structures
5. Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures
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1. The energy state of an impurity donor in a type II quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2015-11
2. Electric field effect on the donor levels bound to the X -valleys in AlAs/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2015-11
3. Interaction of excitons with carriers accelerated by the electric field of a surface acoustic wave in type-II GaAs/AlAs superlattices;Physical Review B;2012-10-25
4. Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions;Journal of Physics: Condensed Matter;2007-01-12
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