Conductance fluctuations in a double-barrier resonant tunneling device
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16721/fulltext
Reference20 articles.
1. Fluctuations in the extrinsic conductivity of disordered metal
2. Weak-localization effects in a resonant-tunneling junction
3. Role of inelastic effects on tunneling via localized states in metal-insulator-metal tunnel junctions
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1. Effect of Bias Step on the I – V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices;Chinese Physics Letters;2006-03-30
2. Electron transport properties through double-barrier structures sandwiching a wide band-gap layer;Physica E: Low-dimensional Systems and Nanostructures;2006-03
3. Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer;The European Physical Journal B;2005-10
4. Study on the current bistability and hysteresis in resonant-tunneling structures;Physics Letters A;2005-07
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