Magnetoresistance and Hall Effect of Hot Electrons in Germanium and Carrier Transfer to Higher Minima
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.2.2009/fulltext
Reference34 articles.
1. Energy-Band Structure of Germanium and Silicon: The k·p Method
2. Δ1Conduction-Band Minimum of Ge from High-Pressure Studies onp−nJunctions
3. Effect of High Pressure on Some Hot Electron Phenomena inn-Type Germanium
4. Contribution of Lattice Scattering between Nonequivalent Valleys to Free-Carrier Infrared Absorption in Semiconductors
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