Electronic and atomic structure of type-II semiconductor superlattices-Reference-Cited by-同舟云学术

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Electronic and atomic structure of type-II semiconductor superlattices

Published:1981-09-15 Issue:6 Volume:24 Page:3620-3622
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Phillips J. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.3620/fulltext

Reference26 articles.

1. New Transport Phenomenon in a Semiconductor "Superlattice"

2. Two-dimensional electronic structure in InAs-GaSb superlattices

3. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices

4. Magnetic field‐induced semimetal‐to‐semiconductor transition in InAs‐GaSb superlattices

5. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. COMPOSITIONALLY MODULATED SUPERLATTICES;Synthetic Modulated Structures;1985

2. A review of recent advances in semiconductor superlattices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983

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