Gate-tunable electronic transport in p -type GaSb quantum wells-Reference-Cited by-同舟云学术

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Gate-tunable electronic transport in p -type GaSb quantum wells

Published:2019-03-26 Issue:11 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Karalic Matija,Mittag Christopher,Hug Michael,Tschirky Thomas,Wegscheider Werner,Ensslin Klaus,Ihn Thomas,Shibata Kenji,Winkler R.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.115435/fulltext

Reference67 articles.

1. The physics and technology of gallium antimonide: An emerging optoelectronic material

2. Antimonide-based compound semiconductors for electronic devices: A review

3. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

4. GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxide

5. Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

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1. Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells;New Journal of Physics;2023-02-01

2. Molecular beam epitaxial growth and electronic transport of GaInSb/GaSb (111) quantum wells;AIP Advances;2022-04-01

3. Helical conducting edge states in narrow-gap semiconductors without band inversion;Physical Review B;2022-01-18

4. Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices;Physical Review B;2021-06-30

5. Magnetotransport of electrically induced two-dimensional hole gases in undoped GaSb quantum wells;Physical Review Research;2020-09-09

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