Current-induced spin polarization in monolayer InSe-Reference-Cited by-同舟云学术

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Current-induced spin polarization in monolayer InSe

Published:2019-12-11 Issue:24 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhou Ma^ORCID,Yu Shengbin,Yang Wen,Lou Wen-kai^ORCID,Cheng Fang,Zhang Dong,Chang Kai

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.245409/fulltext

Reference29 articles.

1. Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides

2. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe

3. Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers

4. Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

5. Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe

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1. Hybrid excitation modes in a GaS monolayer: Effect of hole-phonon coupling;Physical Review B;2024-08-07

2. Ferroelectric manipulation and enhancement of Rashba spin splitting in van der Waals heterostructures;Physical Review B;2024-08-05

3. Electric-field-controlled electronic structures and quantum transport in monolayer InSe nanoribbons;Journal of Physics: Condensed Matter;2024-06-13

4. Intrinsic Switchable Valley-Polarized Photocurrent in ε-InSe;ACS Photonics;2024-01-25

5. Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN₄ Rashba systems;Physical Chemistry Chemical Physics;2024

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