Selective modification of the unquenched orbital moment of manganese introduced by carbon dopant in epitaxial Mn5Ge3C0.2/Ge(111) films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.094401/fulltext
Reference25 articles.
1. Epitaxial ferromagnetic Mn5Ge3 on Ge(111)
2. Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy
3. Magnetic anisotropy in epitaxial Mn5Ge3films
4. Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(111) and (001) Schottky contacts
5. First-principles characterization of ferromagneticMn5Ge3for spintronic applications
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1. Magnetic interactions in epitaxial films of Mn5(Ge1−xSix)3/Ge(111) : 55Mn NMR study;Journal of Magnetism and Magnetic Materials;2024-06
2. Unveiling the atomic position of C in Mn5Ge3Cx thin films;Physical Review Materials;2022-07-22
3. The magnetic properties of Mn5Ge3 thin films grown on PMN-PT;Journal of Magnetism and Magnetic Materials;2022-04
4. Highly ordered carbon penetration into the Mn5Ge3Cx lattice: A superstructure in Mn5Ge3C0.5 inferred from a Mn55 NMR study;Physical Review B;2022-03-04
5. Strong magnetization and anisotropy of Mn5Ge3 thin films on Ge(001);Journal of Physics: Condensed Matter;2021-05-07
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