Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique-Reference-Cited by-同舟云学术

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Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Published:2004-11-24 Issue:20 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ulrici W.,Clerjaud B.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.205214/fulltext

Reference20 articles.

1. Electronic level of interstitial hydrogen in GaAs

2. OH bonds in gallium arsenide grown by the liquid-encapsulated Czochralski crystal-growth method

3. On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs

4. Vibrational modes of a hydrogen-impurity centre in LEC-GaAs

5. Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared absorption on hydrogen in anatase TiO2;physica status solidi (a);2015-01-28

2. Interplay between interstitial and substitutional hydrogen donors in ZnO;Physical Review B;2014-06-18

3. Vibrational Absorption Associated with Hydrogen;Springer Series in Solid-State Sciences;2011-10-27

4. Hydrogen-impurity complexes in III–V semiconductors;Reports on Progress in Physics;2004-11-03

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