Highly sensitive strain detection in silicon by reflectance anisotropy spectroscopy
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.075212/fulltext
Reference23 articles.
1. Piezo-Electroreflectance in Ge, GaAs, and Si
2. Piezo-Raman measurements and anharmonic parameters in silicon and diamond
3. Design of two devices for biaxial stresses and their application to silicon wafers
4. Raman and RAS Measurements on Uniaxially Strained Thin Semiconductor Layers
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