Double Injection in Insulators. II. Further Analytic Results with Negative Resistance
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.1.2735/fulltext
Reference10 articles.
1. Double Injection in Insulators
2. Effect of Shallow Trapping and the Thermal-Equilibrium Recombination Center Occupancy on Double-Injection Currents in Insulators
3. Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case
4. Effects of Diffusion and Thermal Generation on Double Injection in Semiconductors
5. TWO‐CARRIER RECOMBINATION LIMITED CURRENTS IN Si p‐π‐n JUNCTIONS
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1. New solution to the problem of bipolar injection in insulator and semiconductor devices. Solids with an arbitrary distribution of defects;Journal of Electrostatics;1995-12
2. New solution to the problem of bipolar injection in insulator and semiconductor devices;Electrical Engineering;1995-05
3. Bipolar space-charge problem for semiconductors and insulators;Journal of Physics: Condensed Matter;1995-03-27
4. Some conditions for strong asymmetric double injection in insulators and semiconductors;Electrical Engineering;1995-03
5. Threshold voltage and field effects in semiconductor double‐injection devices;Journal of Applied Physics;1987-08-15
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