Optically detected cyclotron-resonance studies of radiative processes inAlxGa1−xAs/GaAs high-electron-mobility structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.14688/fulltext
Reference16 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Two-dimensional electron gas at a semiconductor-semiconductor interface
3. Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions
4. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface
5. Optical spectroscopy of two-dimensional electrons inGaAs−AlxGa1−xAssingle heterojunctions
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1. Microwave-modulated photoluminescence of a two-dimensional electron gas;Physical Review B;2006-12-11
2. Observation of Free Electron Cyclotron Resonance in NaAlSi3O8 Feldspar: Direct Determination of the Effective Electron Mass;physica status solidi (b);2001-06
3. Feasibility of optically detected cyclotron resonance to study electron mobility in ultrapure GaAs;Physical Review B;2000-09-15
4. Photoluminescence of two-dimensional electron system excited by far-infrared cyclotron resonance in GaAs/AlGaAs double heterostructure;Journal of Luminescence;2000-05
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