Gold donor state in silicon: Temperature dependence of the energy level and the capture cross section
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.5840/fulltext
Reference31 articles.
1. Fine Structure in the Absorption-Edge Spectrum of Si
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4. Temperature Dependence of the Energy Gap in Semiconductors
5. Debye-Waller Factors and the PbTe Band-Gap Temperature Dependence
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