Lattice properties of strained GaAs, Si, and Ge using a modified bond-charge model
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.7775/fulltext
Reference26 articles.
1. Pressure-dependent phonon properties of III-V compound semiconductors
2. Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures
3. Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
4. Piezo-Raman measurements and anharmonic parameters in silicon and diamond
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