Ultraviolet anti-Stokes photoluminescence inInxGa1−xN/GaNquantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.12654/fulltext
Reference23 articles.
1. Indirect Band-to-Band Auger Recombination in Ge
2. Relaxation of Auger-excited carriers in silicon
3. Auger recombination in GaAs and GaSb
4. The Raman effect in crystals
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