Vibrational properties of the Si(111)Ga(√3 × √3 ) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.5233/fulltext
Reference19 articles.
1. Surface reactions of silicon with aluminum and with indium
2. Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries
3. Geometric structure of the Si(111)√3×√3-Ga surface
4. An STM study of the gallium induced reconstruction of Si(111)
5. X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface
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1. 9.7.3 Semiconductor;Physics of Solid Surfaces;2015
2. Effective mass of a two-dimensional √3 × √3 Ga single atomic layer on Si(111);Surface Science;2014-12
3. Gallium structure on the Si(111)-(7 × 7) surface: influence of Ga coverage and temperature;Journal of Physics: Condensed Matter;2006-12-08
4. Anisotropy of surface vibration measured by temperature dependence of the spot intensity in reflection high-energy electron diffraction;Physical Review B;2005-03-31
5. References for 4.5;Landolt-Börnstein - Group III Condensed Matter;2002
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