Observation of free-exciton two-electron transitions in wavelength-derivative absorption spectra of impurity-doped silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.5771/fulltext
Reference21 articles.
1. Fine Structure in the Absorption-Edge Spectrum of Si
2. Valley-Orbit Splitting of the Indirect Free Exciton in Silicon
3. Valley-Orbit Splitting of the Indirect Free Exciton in Silicon
4. Intensity of Optical Absorption by Excitons
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon;Journal of the Physical Society of Japan;1978-02
2. A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and Tl;Journal of Luminescence;1977-12
3. Absorption due to the creation of bound excitons in phosphorus-doped silicon;Journal of Physics C: Solid State Physics;1977-11-14
4. A shell model of bound multiexciton complexes in silicon;Canadian Journal of Physics;1977-10-15
5. Details of the structure of bound excitons and bound multiexciton complexes in Si;Canadian Journal of Physics;1977-09-01
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