Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3711/fulltext
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1. Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Photoemission study of GaSb(111) and Ge adsorbed on GaSb(111) surfaces;Journal of Physics: Condensed Matter;1997-06-02
3. Heterojunction band offset engineering;Surface Science Reports;1996
4. Nonmagnetic-semimagnetic semiconductor heterostructures: Ge-Cd1−xMnxTe(110);Physical Review B;1993-08-15
5. Calculated photocurrents and surface barrier heights;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-05
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