Persistent photoconductivity and photoionization of deep electron traps in Ga-dopedCd1−xMnxTe
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.12540/fulltext
Reference33 articles.
1. Decay kinetics of persistent photoconductivity in semiconductors
2. Nonexponential Relaxation of Conductance near Semiconductor Interfaces
3. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
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