Ferromagnetic instability in a doped band gap semiconductor FeGa3-Reference-Cited by-同舟云学术

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Ferromagnetic instability in a doped band gap semiconductor FeGa3

Published:2012-10-31 Issue:14 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Umeo K.,Hadano Y.,Narazu S.,Onimaru T.,Avila M. A.,Takabatake T.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.144421/fulltext

Reference55 articles.

1. Paramagnetic Excited State of FeSi

2. Long period helimagnetism in the cubic B20 FexCo1−xSi and CoxMn1−x Si alloys

3. Unconventional charge gap formation in FeSi

4. Thermodynamics of FeSi

5. Singlet Semiconductor to Ferromagnetic Metal Transition in FeSi

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1. Ferromagnetic quantum critical phenomena in single-crystalline SrCo2(Ge1−xPx)2;Physical Review B;2023-04-20

2. Hopping thermopower in FEGA₃;International Journal of Modern Physics B;2022-11-15

3. Intermetallic compounds with non-metallic properties;Russian Chemical Bulletin;2020-12

4. Doping quantum materials: Defects and impurities in FeGa3;Physical Review B;2020-09-29

5. Electron-Precise Semiconducting ReGa2Ge: Extending the IrIn3 Structure Type to Group 7 of the Periodic Table;Inorganic Chemistry;2020-08-26

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