Transverse magnetotunneling inAlxGa1−xAs capacitors. III. Tunneling into interface Landau states inn+-type GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.12880/fulltext
Reference26 articles.
1. Observation of bulk Landau levels in transverse magnetotunneling in AlxGa1-xAs capacitors
2. Observations of Magnetoquantized Interface States by Electron Tunneling in Single-Barriern−(InGa)As−InP−n+(InGa)AsHeterostructures
3. Hot Electron and Landau-Level Effects in theJ(V) Characteristics of III-V Semiconductor Tunnelling Heterostructures
4. Electron tunnelling into interfacial Landau states in single barrier N-type (InGa)As/InP/(InGa)As heterostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Landau levels in the presence of a potential barrier;Journal of Physics: Condensed Matter;1994-08-15
2. Incoherent mesoscopic hole tunneling through barrier states inp-typeAlxGa1−xAs capacitors;Physical Review B;1992-12-15
3. Electron Tunneling in Semiconductors;Basic Properties of Semiconductors;1992
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