Substitutional carbon in group-III nitrides:Ab initiodescription of shallow and deep levels
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.075209/fulltext
Reference54 articles.
1. Growth and applications of Group III-nitrides
2. On p‐type doping in GaN—acceptor binding energies
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4. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition
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