Probing conducting interfaces by combined photoluminescence and transport measurements: LaVO3 and SrTiO3 interface as a case study
Author:
Funder
Indian National Science Academy
Board of Research in Nuclear Sciences
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.L081111/fulltext
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1. Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors
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3. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
4. Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures
5. Artificial quantum confinement in LaAlO3/SrTiO3 heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Linear magnetoresistance and weak antilocalization in a LaVO3/KTaO3 heterostructure;Physical Review B;2024-06-05
2. Possible Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi‐2‐Dimensional Electron Gas at the Interface of LaVO 3 and KTaO 3;Advanced Electronic Materials;2022-06-11
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