Enhancement of the Pockels component in the electroreflectance spectra of quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.17444/fulltext
Reference22 articles.
1. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
2. Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field
3. Electric-Field-Induced Localization and Oscillatory Electro-optical Properties of Semiconductor Superlattices
4. Theory of Stark Effect in Crystals
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1. Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry;Journal of Applied Physics;2009-05-15
2. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1999-04
3. Polarization anisotropy in room temperature contactless electroreflectance spectrum of self-organized lateral compositional superlattices;Superlattices and Microstructures;1998-08
4. Electric-Field Domains, Pockels Effect and Coherent Acoustic Phonons in Superlattices;Optical Spectroscopy of Low Dimensional Semiconductors;1997
5. Dependence of the linear and quadratic electrooptical coefficients on the quantum well thickness;Solid-State Electronics;1996-01
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