Influence of the resonant acceptor state on the magnetotransport properties of zero-band-gapHg1−xMnxTe-Reference-Cited by-同舟云学术

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Influence of the resonant acceptor state on the magnetotransport properties of zero-band-gapHg1−xMnxTe

Published:1988-08-15 Issue:5 Volume:38 Page:3354-3361
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mani R. G.,Anderson J. R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.3354/fulltext

Reference21 articles.

1. Electrical, optical, and magnetic properties of Hg1−xMnxTe

2. Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe

3. Influence of Exchange Interaction on the Quantum Transport Phenomena in Hg1−xMnxTe

4. Spin glass phase transition in Hg1−kMnkTe semimagnetic semiconductors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron heating induced by microwave photoexcitation in the GaAs/AlGaAs two-dimensional electron system;Physical Review B;2018-07-20

2. Properties of diluted magnetic semiconductors;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

3. Resonant states in semiconductors: A quantitative study of HgSe:Fe;Solid State Communications;1990-05

4. Correlation of donor electrons in diluted magnetic semiconductors with iron;Semiconductor Science and Technology;1990-03-01

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