Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon-Reference-Cited by-同舟云学术

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Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon

Published:1998-11-15 Issue:19 Volume:58 Page:12853-12864
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Acco S.,Williamson D. L.,van Sark W. G. J. H. M.,Sinke W. C.,van der Weg W. F.,Polman A.,Roorda S.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.12853/fulltext

Reference51 articles.

1. Structural interpretation of the vibrational spectra ofa-Si: H alloys

2. Proton nmr studies of annealed plasma-deposited amorphous Si:H films

3. Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous Silicon

4. A small angle neutron scattering (SANS) study of hydrogen in hydrogenated amorphous silicon

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing;IEEE Journal of Photovoltaics;2017-03

2. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation;AIP Advances;2016-12

3. Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si;Journal of Applied Physics;2016-03-21

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