High-temperature mobility of puren-type InP epitaxial layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.4388/fulltext
Reference20 articles.
1. Electron mobility in compensated GaAs and AlxGa1−xAs
2. Electron scattering by localized impurity potentials in compensated GaAs
3. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
4. The Hall effect in III-V semiconductor assessment
5. Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy
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3. The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP;Journal of Applied Physics;1997-12
4. Investigations on indium phosphide grown by chemical beam epitaxy;Journal of Electronic Materials;1995-10
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