Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors-Reference-Cited by-同舟云学术

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Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

Published:2010-11-24 Issue:20 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kim Yoon-Suk,Marsman Martijn,Kresse Georg,Tran Fabien,Blaha Peter

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.205212/fulltext

Reference66 articles.

1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

2. Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb

3. High-power laser diodes based on InGaAsP alloys

4. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

5. Spin-orbit splitting in crystalline and compositionally disordered semiconductors

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