Electronic structure ofZn1−xMnxTe
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.15789/fulltext
Reference34 articles.
1. Physicochemical properties and crystal growth of AIIBVI - MnBVI systems
2. Effect of the magnetic order on the optical-absorption edge inCd1−xMnxTe
3. Spin-flip Raman scattering inn-type diluted magnetic semiconductors
4. Lattice parameter and optical-energy gap values for Cd x Zn y Mn z Te alloys
5. Magnetization and magnetoreflectance inZn1−xMnxTe
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1. Electronic structures andp−dexchange interaction of Mn-doped diluted magnetic semiconductors;Physical Review B;2008-11-25
2. Total electron yield XANES of zinc-blende MnTe;Applied Surface Science;2008-09
3. Differential reflectivity and photoemission study of ZnTe and CdTe (1 1 0) surface;Journal of Alloys and Compounds;2004-11
4. Mn doped ZnTe(1 1 0)-(1 × 1) surface in resonant photoemission study;Journal of Alloys and Compounds;2004-11
5. Optical properties of molecular beam epitaxy-grown Zn1−xMnxTe thin films measured by complementary techniques;Journal of Applied Physics;2003-10
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