Electronic properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>BiTe</mml:mi><mml:mi>X</mml:mi></mml:math> ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>X</mml:mi></mml:math> =Cl, Br, and I) through generalized tight-binding models: Orthogonal and nonorthogonal perspectives-Reference-Cited by-同舟云学术

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Electronic properties of BiTeX ( X =Cl, Br, and I) through generalized tight-binding models: Orthogonal and nonorthogonal perspectives

Published:2024-05-10 Issue:19 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ganjehie S.¹^ORCID,Hessami Pilehrood S.¹^ORCID,Ketabi S. A.²,Nakhaee M.³^ORCID

Affiliation:

1. Faculty of Physics, Shahrood University of Technology, Shahrud, Iran

2. School of Physics, Damghan University, Dāmghān, Iran

3. Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.195138/fulltext

Reference35 articles.

1. Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

2. BiTeCl and BiTeBr: A comparative high-pressure optical study

3. Reversal of spin-polarization near the Fermi level of the Rashba semiconductor BiTeCl

4. Giant Rashba-type spin splitting in bulk BiTeI

5. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

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