Fermi-energy edge singularity and excitonic enhancement associated with the second subband in asymmetric modulation-doped quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.14253/fulltext
Reference49 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Optical processes of 2D electron plasma in GaAs-(AlGa)As heterostructures
3. Many-Body Effects in a Modulation-Doped Semiconductor Quantum Well
4. Carrier-induced shift and broadening of optical spectra in anAlxGa1−xAs/GaAs quantum well with a gate electrode
5. Linear and nonlinear optical properties of semiconductor quantum wells
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1. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well;Applied Physics Letters;2017-06-26
2. Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells;Bulletin of Materials Science;2011-12
3. Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells;Physica B: Condensed Matter;2009-02
4. Fermi-Edge Singularities inAlxGa1−xAsQuantum Wells: Extrinsic versus Many-Body Scattering Processes;Physical Review Letters;2000-07-24
5. Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-03-21
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