Growth process of Ge on Si(100)-(2×1)in atomic-layer epitaxy fromGe2H6
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4878/fulltext
Reference31 articles.
1. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
2. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
3. Interaction ofSi2H6with a Si(111)-77 surface
4. Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane
5. Investigation on the growth rate enhancement by Ge during SiGe alloy deposition by chemical vapor deposition
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