Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation-Reference-Cited by-同舟云学术

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Published:2020-10-05 Issue:16 Volume:102 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kim Kyung Ho^ORCID,He Hans^ORCID,Struzzi Claudia,Zakharov Alexei^ORCID,Giusca Cristina E.^ORCID,Tzalenchuk Alexander,Park Yung Woo,Yakimova Rositsa,Kubatkin Sergey,Lara-Avila Samuel^ORCID

Funder

Stiftelsen för Strategisk Forskning

National Research Foundation of Korea

Knut och Alice Wallenbergs Stiftelse

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.165403/fulltext

Reference39 articles.

1. Homogeneous large-area graphene layer growth on6H-SiC(0001)

2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

3. Charge transfer between epitaxial graphene and silicon carbide

4. Impact of graphene quantum capacitance on transport spectroscopy

5. Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

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