Stark broadening of impurity absorption lines by inhomogeneous electric fields in highly compensated germanium
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.16272/fulltext
Reference26 articles.
1. INFRARED ABSORPTION LINES IN BORON-DOPED SILICON
2. EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON
3. Internal Stark Effect on Impurity States in Germanium
4. Pair Spectra and "Edge" Emission in Gallium Phosphide
5. Far infrared magneto-optic effects from impurities in germanium
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