Conductivity of metallic Si:B near the metal-insulator transition: Comparison between unstressed and uniaxially stressed samples
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.2292/fulltext
Reference35 articles.
1. Sharp Metal-Insulator Transition in a Random Solid
2. Tunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: Si
3. The metal-insulator transition in amorphous Nb:Si
4. Evidence for localization effects in compensated semiconductors
5. Metal-insulator transition in Si: As
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