Directional resolution of the GaAs heavy-hole band dispersion and photoelectron-momentum orientation from hot-electron luminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.7990/fulltext
Reference16 articles.
1. Spectrum and polarization of hot-electron photoluminescence in semiconductors
2. Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs
3. Polar optic phonon and Γ→Lintervalley scattering times in GaAs from steady‐state hot‐electron luminescence spectroscopy
4. Band-structure determination of GaAs from hot-electron luminescence
5. Hot-electron luminescence: A comparison of GaAs and InP
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1. Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs;Physical Review Letters;2005-01-20
2. Direct verification of the q-dependence of the Fröhlich interaction;Solid State Communications;2002-06
3. Spectroscopy of hot electron photoluminescence in GaAs/AlAs superlattices;PHYS STATUS SOLIDI B;1999
4. Investigation of the Luttinger parameters for InP using hot-electron luminescence;Physical Review B;1994-10-15
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