Electronic structure of defects and impurities in III-V nitrides. II. Be, Mg, and Si in cubic boron nitride
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.13077/fulltext
Reference25 articles.
1. Prospects for device implementation of wide band gap semiconductors
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