Shallow impurity absorption spectroscopy in isotopically enriched silicon-Reference-Cited by-同舟云学术

Shallow impurity absorption spectroscopy in isotopically enriched silicon

Published:2009-05-20 Issue:20 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Steger M.,Yang A.,Karaiskaj D.,Thewalt M. L. W.,Haller E. E.,Ager J. W.,Cardona M.,Riemann H.,Abrosimov N. V.,Gusev A. V.,Bulanov A. D.,Kaliteevskii A. K.,Godisov O. N.,Becker P.,Pohl H.-J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.205210/fulltext

Reference29 articles.

1. Isotopically engineered semiconductors

2. Isotopic Effects in the Phonon and Electron Dispersion Relations of Crystals

3. Chapter 2 Thermal properties

4. The Highly Isotopic Enriched (99.9%), High-Pure28Si Single Crystal

5. Large-scale production of highly enriched28Si for the precise determination of the Avogadro constant

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