Surface modes in accumulation layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.974/fulltext
Reference36 articles.
1. Calculation of EELS at a doped semiconductor surface
2. Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)
3. High resolution electron energy loss spectroscopy on semiconductor surfaces
4. Gas adsorption on cleaved GaAs(110) surfaces studied by surface photovoltage spectroscopy
5. ELS studies of quantized accumulation layers on ZnO surfaces
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1. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering;Journal of Applied Physics;2001-11
2. Plasmons and magnetoplasmons in semiconductor heterostructures;Surface Science Reports;2001-03
3. Solitary excitations of a two-dimensional electron gas;Journal of Mathematical Physics;1998-12
4. Silicon spreading in δ-doped GaAs(100): A high-resolution electron-energy-loss-spectroscopy study;Physical Review B;1996-07-15
5. Subband structure and plasmon-phonon coupled excitations in the accumulation layer of ZnO;Physical Review B;1990-03-15
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