Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures-Reference-Cited by-同舟云学术

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Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

Published:2017-12-27 Issue:24 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gawełczyk M.,Syperek M.,Maryński A.,Mrowiński P.,Dusanowski Ł.,Gawarecki K.,Misiewicz J.,Somers A.,Reithmaier J. P.,Höfling S.,Sęk G.

Funder

Narodowe Centrum Nauki

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.245425/fulltext

Reference62 articles.

1. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

2. Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate

3. Size control of InAs quantum dashes

4. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

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1. Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates;ACS Applied Materials & Interfaces;2024-09-13

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3. Symmetry breaking via alloy disorder to explain radiative Auger transitions in self-assembled quantum dots;Physical Review B;2023-12-07

4. High-resolution X-ray diffraction to probe quantum dot asymmetry;Measurement;2023-11

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