Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.125315/fulltext
Reference17 articles.
1. Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts
2. Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions
3. Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
4. Pressure and alloy-composition dependence ofAl/Ga1−xAlxAs(100)Schottky barriers
5. Efficient pseudopotentials for plane-wave calculations
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