Asymmetry of acceptor wave functions caused by surface-related strain and electric field in InAs
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.115344/fulltext
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1. Empty state and filled state image of ZnGa acceptor in GaAs studied by scanning tunneling microscopy
2. Zn- and Cd-induced features at the GaAs(110) and InP(110) surfaces studied by low-temperature scanning tunneling microscopy
3. Spatial Structure of an Individual Mn Acceptor in GaAs
4. Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs
5. Spatial Structure of a Single Mn Impurity State on GaAs (110) Surface
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