Ab initioformation energies of point defects in pure and Ge-dopedSiO2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.7304/fulltext
Reference37 articles.
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5. Correlation of the 5.0- and 7.6-eV absorption bands inSiO2with oxygen vacancy
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