Metal-insulator transition in Kondo insulators: A functional-integral approach-Reference-Cited by-同舟云学术

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Metal-insulator transition in Kondo insulators: A functional-integral approach

Published:1998-03-15 Issue:12 Volume:57 Page:6943-6948
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tovar Costa M. V.,Troper A.,de Oliveira N. A.,Japiassú Gloria M.,Continentino M. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.6943/fulltext

Reference28 articles.

1. Large low-temperature Hall effect and resistivity in mixed-valent SmB6

2. Electron Tunneling into Intermediate-Valence Materials

3. Pressure-driven semiconductor-metal transition in intermediate-valenceTmSe1−xTexand the concept of an excitonic insulator

4. Excitonic insulator phase inTmSe0.45Te0.55

5. Intermediate valence and the possibility of a magnetic excitonic insulator

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The pressure induced insulator to metal transition in FeSb2;Journal of Physics: Condensed Matter;2012-02-02

2. INVESTIGATION OF THE DENSITY OF STATES IN THE NON-HALF-FILLED TWO BAND PERIODIC ANDERSON MODEL;International Journal of Modern Physics B;2006-08-20

3. Transport properties of Kondo-insulator alloys;Physical Review B;2003-12-30

4. Magnetic field effect on doped Kondo insulators;Journal of Physics and Chemistry of Solids;2003-07

5. A simple model for anisotropic Kondo insulators;Physica B: Condensed Matter;2001-09

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